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News & Events

Sept, 2008

 

 

Lite-On Semi New Switching Diode LS4448W with Pd= 0.4W Vbr=100V Iav=0.25A in 1206
▼Peak repetitive reverse voltage Vrrm= 100V w/ total power dissipation Pd= 400mW

▼Average rectified output current Iav= 250mA

▼Forward surge current at 1s Ifsm= 800mA

▼ Reverse leakage current Ir= 25nA at Vr=20 V

▼Fast reverse recovery time Trr= 4 ns

▼ Replacing 1N4448W (SOD-123) w/ sodering pad compatable



Visit Lite-On Semiconductor's website for detailed information


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